CHAPTER-1-MOTIVATION BEHIND THE HIGH ELECTRON MOBILITY TRANSISTORS INTRODUCTION CURRENT AND FUTURE DEVICE TECHNOLOGIES ADVANCED MMIC AND TMIC TECHNOLOGIES SUBMILLIMETRE WAVE APPLICATIONS TERAHERTZ APPLICATIONS TRANSISTOR TECHNOLOGY FOR 4G/5G COMMUNICATIONS NEED FOR ENHANCING THE DATA CAPACITY OF ADVANCED WIRELESS COMMUNICATIONS SPACE APPLICATIONS DEFENCE APPLICATIONS MEDICAL AND MILLITARY APPLICATIONS CHAPTER-2-INTRODUCTION TO HIGH ELECTRON MOBILITY TRANSISTORS HISTORY AND BACKGROUND OF HEMTS BASIC STRUCTURE OF HEMTS PRINCIPLE OF OPERATION OF HEMTS MODULATION DOPING AND 2DEG HEMT MATERIAL SYSTEMS CLASSIFICATION OF HEMTS CHAPTER-3-HEMT MATERIAL TECHNOLOGY AND EPITAXIAL DEPOSITION TECHNIQUES III-V COMPOUND SEMICONDUCTORS PHYSICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS ELECTRICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS MECHANICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS OPTICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS III-V HETEROSTRUCTURE INTERFACE QUALITY AND EFFECTS OF TRAP DENSITY GATE MATERIALS AND STRUCTURES SOURCE/DRAIN CONTACT MATERIALS SELF ALIGNED PROCESS MOLECULAR BEAM EPITAXY CHEMICAL VAPOUR DEPOSITION METAL ORGANIC CHEMICAL VAPOUR DEPOSITION CHAPTER-4- SOURCE/DRAIN, GATE AND CHANNEL ENGINEERING IN HEMTS HEMT SMALL SIGNAL MODEL PARASITIC RESISTANCES IN HEMTS PARASITIC CAPACITANCES IN HEMTS SOURCE/DRAIN ENGINEERING GATE ENGINEERING HEMT SMALL SIGNAL MODEL PARASITIC RESISTANCES IN HEMTS PARASITIC CAPACITANCES IN HEMTS SOURCE/DRAIN ENGINEERING GATE ENGINEERING CHANNEL ENGINEERING CHANNEL RESISTANCE CHAPTER-5-AlGaN/GaN HEMTS FOR HIGH POWER APPLICATIONS GENERAL STRUCTURE OF AlGaN/GaN HEMTS IMPACT OF BACK BARRIER DC AND RF CHARACTERISTICS BREAKDOWN CHARACTERISTICS SMALL SIGNAL EQUIVALENT CIRCUIT CHAPTER-6- AlGaN/GaN HEMT FABRICATION AND CHALLENGES DEVICE DESIGN PROCESS DEVICE PROCESSING LITHOGRAPHY METALLIZATION AND ANNEALING DRY ETCHING FLOURINATION CHAPTER-7-ANALYTICAL MODELING OF HIGH ELECTRON MOBILITY TRANSISTORS INTRODUCTION AlInSb/InSb HEMT DEVICE STRUCTURE AlInSb/InSb HEMT ANALYTICAL MODELING OF CHANNEL POTENTIAL AlInSb/InSb HEMT ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT AlInSb/InSb HEMT ANALYTICAL MODELING OFCHARGE DENSITY AND FERMILEVEL AlInSb/InSb HEMT SCALE LENGTH MODELING WITH EFFECTIVE CONDUCTING PATH EFFECT GATE ENGINEERED HIGH ELECTRON MOBILITY TRANSISTORS DEVICE STRUCTURE OF AlInSb/InSb TMG HEMT ANALYTICAL MODELING OF CHANNEL POTENTIAL FOR AlInSb/InSbTMG HEMT ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT FOR AlInSb/InSbTMG HEMT CHAPTER-8 POLARIZATION EFFECTS IN AlGaN/GaN HEMTS POLARIZATION IN AlGaN/GaN HEMT PIEZOELECTRIC POLARIZATION SPONTANEOUS POLARIZATION POLARIZATION INDUCED AlGaN/GaN HEMTs POLARIZATION INDUCED EFFECTS IN AlGaN/GaN HEMTs EFFECT OF POLARIZATION ON 2DEG OF AlGaN/GaN HEMTs CHAPTER-9 CURRENT COLLAPSE IN AlGaN/GaN HEMTS INTRODUCTION ORIGIN AND PROPERTIES OF INTERFACE AND NEAR INTERFACIAL TRAPS PROPERTIES AND INFLUENCE OF SURFACE TRAPS PROPERTIES AND INFLUENCE OF BULK TRAPS EFFECT OF TEMPERATURE ON TRAPS IN AlGaN/GaN HEMT IMPACT OF TRAPS IN AlGaN/GaN HEMT CHAPTER-10 AlGaN/GaN HEMT MODELING AND SIMULATION SMALL SIGNAL EQUIVALENT CIRCUIT 2DEG MODELING OF AlGaN/GaN HEMT DRAIN CURRENT MODELING OF AlGaN/GaN HEMT SIMULATION OF DC PARAMETERS ANALYSIS OF RF PERFORMANCE CHAPTER-11 BREAKDOWN VOLTAGE IMPROVEMENT TECHNIQUES IN AlGaN/GaN HEMTS EFFECT OF PASSIVATION FIELD PLATE TECHNIQUES ASYMMETRIC AlGaN/GaN HEMTS FOR HIGH POWER APPLICATIONS METHODES TO REDUCE PARASITICS SCALABILITY CHAPTER-12-InP/InAlAs/InGaAs HEMTS FOR HIGH SPEED AND LOW POWER APPLICATIONS InP/InAlAs/InGaAs HEMT STRUCTURE PHYSICS OF InP/InAlAs/InGaAs HEMT BURIED PLATINUM TECHNOLOGY DOUBLE DELTA DOPING TECHNOLOGY DC, RF AND BREAKDOWN VOLATEG CHARACTERISTICS SCALABILITY KINK EFFECTS SHORT CHANNEL EFFECTS APPLICATIONS OF InP/InAlAs/InGaAs HEMTS CHAPTER-13-A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System INTRODUCTION BACKGROUND MATERIALS AND METHODS (PREPARATION OF GaN AND AlGaN ) RESULTS CONCLUSIONS CHAPTER-14-METAMORPHIC HEMTS FOR SUBMILLIMETRE WAVE APPLICATIONS INTRODUCTION TO MHEMT TECHNOLOGY GaAs MHEMT FOR SUBMILLIMETRE WAVE APPLICATIONS ASYMMETRIC MHEMT FOR HIGH POWER APPLICATIONS DC AND RF CHARACTERISTICS APPLICATIONS OF MHEMTs CHAPTER-15-METAL OXIDE SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS MOSHEMT STRUCTURE MOSHEMT MATERIAL SYSTEMS DC & RF CHARACETRISTICS OF MOSHEMT HIGH-K DIELECTRICS FOR MOSHEMT ADVANTAGES OF MOSHEMT CHAPTER-16-DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTORS AlGaN/GaN DG-HEMT STRUCTURE AlGaN/GaN DC & RF CHARACTERISTICS InGaAs/InAs DG-HEMT STRUCTURE InGaAs/InAs DG-HEMT DC & RF CHARACTERISTICS PARASITICS IN DG-HEMT t;P> METALLIZATION AND ANNEALING DRY ETCHING FLOURINATION CHAPTER-7-ANALYTICAL MODELING OF HIGH ELECTRON MOBILITY TRANSISTORS INTRODUCTION AlInSb/InSb HEMT DEVICE STRUCTURE AlInSb/InSb HEMT ANALYTICAL MODELING OF CHANNEL POTENTIAL AlInSb/InSb HEMT ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHO.