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VLSI and Post-CMOS Electronics : Design, Modelling and Simulation
VLSI and Post-CMOS Electronics : Design, Modelling and Simulation
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ISBN No.: 9781839530517
Pages: 368
Year: 201911
Format: Trade Cloth (Hard Cover)
Price: $ 220.80
Dispatch delay: Dispatched between 7 to 15 days
Status: Available

Section I: Low voltage and low power VLSI design Chapter 1: Low-voltage analog signal processing Chapter 2: Negative bias temperature instability (NBTI) aware low leakage circuit design Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold design technique Chapter 4: Design and analysis of memristor-based DRAM cell for low-power application Chapter 5: Design of a novel tunnel FET for low-power applications Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL Section II: Modelling and simulation for post-CMOS device and circuit design Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and challenges Chapter 8: Two-dimensional material-based field-effect transistors for post-silicon electronics Chapter 9: Theory and modelling of spin-transfer-torque based electronic devices Chapter 10: Spintronics memory and logic: an efficient alternative to CMOS technology Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms Chapter 12: High performing metal-oxide semiconductor thin-film transistors Chapter 13: CNTFETs: modelling and circuit design ter 8: Two-dimensional material-based field-effect transistors for post-silicon electronics Chapter 9: Theory and modelling of spin-transfer-torque based electronic devices Chapter 10: Spintronics memory and logic: an efficient alternative to CMOS technology Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms Chapter 12: High performing metal-oxide semiconductor thin-film transistors Chapter 13: CNTFETs: modelling and circuit design ter 8: Two-dimensional material-based field-effect transistors for post-silicon electronics Chapter 9: Theory and modelling of spin-transfer-torque based electronic devices Chapter 10: Spintronics memory and logic: an efficient alternative to CMOS technology Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms Chapter 12: High performing metal-oxide semiconductor thin-film transistors Chapter 13: CNTFETs: modelling and circuit design ter 8: Two-dimensional material-based field-effect transistors for post-silicon electronics Chapter 9: Theory and modelling of spin-transfer-torque based electronic devices Chapter 10: Spintronics memory and logic: an efficient alternative to CMOS technology Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms Chapter 12: High performing metal-oxide semiconductor thin-film transistors Chapter 13: CNTFETs: modelling and circuit design apter 10: Spintronics memory and logic: an efficient alternative to CMOS technology Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms Chapter 12: High performing metal-oxide semiconductor thin-film transistors Chapter 13: CNTFETs: modelling and circuit design.


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