Preface Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC Prediction of Contact Resistance of 4H-SiC by Machine Learning Using Optical Microscope Images after Laser Doping The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3Interlayer between SiC and SiO2 Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask A Comparison between Different Post Grinding Processes on 4H-SiC Wafers Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C).