Introduction to Semiconductor Compounds III¿V semiconductor alloys III¿V semiconductor devices Technology of multilayer growth Growth Technology Metalorganic chemical vapor deposition New non-equilibrium growth techniques In situ Characterization during MOCVD Reflectance anisotropy and ellipsometry Optimization of the growth of III¿V binaries by RDS RDS investigation of III¿V lattice-matched heterojunctions RDS investigation of III¿V lattice-mismatched structures Insights on the growth process Ex situ Characterization Techniques Chemical bevel revelation Deep-level transient spectroscopy X-ray diffraction Photoluminescence Electromechanical capacitance-voltage and photovoltage spectroscopy Resistivity and Hall measurement Thickness measurement MOCVD Growth of GaAs Layers GaAs and related compounds band structure MOCVD growth mechanism of GaAs and related compounds Experimental details Incorporation of impurities in GaAs grown by MOCVD Growth and Characterization of the GaInP¿GaAs System Growth details Structural order in GaxIn1¿xP alloys grown by MOCVD Defects in GaInP layers grown by MOCVD Doping behavior of GaInP GaAs¿GaInP heterostructures Growth and characterization of GaInP¿GaAs multilayers by MOCVD Optical and structural investigations of GaAs¿GaInP quantum wells and superlattices grown by MOCVD Characterization of GaAs¿GaInP quantum wells by auger analysis of chemical bevels Evaluation of the band offsets of GaAs¿GaInP multilayers by electroreflectance Intersubband hole absorption in GaAs¿GaInP quantum wells Optical Devices Electro-optical modulators GaAs-based infrared photodetectors grown by MOCVD Solar cells and GaAs solar cells GaAs-Based Lasers Basic physical concepts Laser structures New GaAs-based materials for lasers GaAs-Based Heterojunction Electron Devices Grown by MOCVD Heterostructure field-effect transistors (HFETs) Heterojunction bipolar transistors (HBTs) Optoelectronic Integrated Circuits (OEICs) Material considerations OEICs on silicon substrates The role of optoelectronic integration in computing Examples of optoelectronic integration by MOCVD InP¿InP System: MOCVD Growth, Characterization, and Applications Energy band structure of InP Growth and characterization of InP using TEIn Growth and characterization of InP using TMIn Incorporation of dopants Applications of InP epitaxial layers GaInAs¿InP System: MOCVD Growth, Characterization, and Applications Growth conditions Optical and crystallographic properties, and impurity incorporation in GaInAs grown by MOCVD Shallow p+ layers in GaInAs grown by MOCVD by mercury implantation GaInAs¿InP heterojunctions: Multiquantum wells and superlattices grown by MOCVD Magnetotransport in GaInAs¿InP heterojunctions grown by MOCVD Applications of GaInAs¿InP system grown by MOCVD GaInAsP¿InP System: MOCVD Growth, Characterization, and Applications Growth conditions Characterization Applications of GaInAsP¿InP systems grown by MOCVD Strained Heterostructures: MOCVD Growth, Characterization, and Applications Growth procedure and characterization Growth of GaInAs¿InP multiquantum wells on GGG substrates Applications Monolayer epitaxy of (GaAs)n(InAs)n¿InP by MOCVD MOCVD Growth of III¿V Heterojunctions and Superlattices on Silicon Substrates MOCVD growth of GaAs on silicon InP grown on silicon GaInAsP¿InP grown on silicon Applications Optoelectronic Devices Based on Quantum Structures GaAs and InP based quantum well infrared photodetectors (QWIP) Self-assembled quantum dots, and quantum dot based photodetectors Quantum dot lasers InP based quantum cascade lasers (QCLs).