Vinod Kumar Khanna received his M.Sc. degree in physics from the University of Lucknow, Lucknow, India, in 1975, and his Ph.D. degree in physics from Kurukshetra University, Kurukshetra, India, in 1988 for the thesis entitled, "Development, Characterization and Modelling of the Porous Alumina Humidity Sensor." For more than 36 years at CSIR-CEERI, Dr. Khanna has been involved in different research and development projects on thin-film humidity sensors, high-voltage TV deflection transistors, power Darlington transistors for AC motor drives, fast-switching thyristors, high-current and high-voltage rectifiers, neutron dosimetry diodes, power DMOSFET and IGBT, PMOSFET gamma ray dosimeter, microelectromechanical system (MEMS) technology-based microsensors, ion-sensitive field-effect transistors (ISFETs), ISFET-based chemical and biosensors, capacitive MEMS ultrasonic transducer (cMUT), pressure sensors, MEMS gyroscopes, and MEMS hotplate gas sensors. His present research is focused on nanosensors, particularly on the nanotechnological approaches for improving ISFET performance, and the development of dual-gate silicon nanowire ion-sensitive field-effect transistor (Nano-ISFET).

He is a life member (Fellow) of the Institution of Electronics & Telecommunication Engineers (IETE), India, and also life member of Indian Physics Association (IPA), Semiconductor Society India (SSI), and Indo-French Technical Association (IFTA). Dr. Khanna has authored 9 previous books and contributed six chapters to edited books. He has authored or co-authored 181 research papers in various reputed international and national journals and conference proceedings ans holds four patents.